Broadband single mode SiGe graded waveguides with tight mode confinement for mid-infrared photonics

被引：0

作者：

Ramirez, Joan Manel ^{[1
]}

Vakann, Vladyslav ^{[1
]}

Rahman, Mumtahina ^{[1
]}

Chaisakul, Papichaya ^{[1
]}

Le Roux, Xavier ^{[1
]}

Vivien, Laurent ^{[1
]}

Marris-Morini, Delphine ^{[1
]}

Chrastina, Daniel ^{[2
]}

Frigerio, Jacopo ^{[2
]}

Ballabio, Andrea ^{[2
]}

Isella, Giovanni ^{[2
]}

机构：

[1] Univ Paris Saclay, Univ Paris Sud, CNRS, Inst Elect Fondamentale, F-91405 Orsay, France

[2] Politecn Milan, Dipartimento Fis, L NESS, Via Anzani 42, I-22100 Como, Italy

来源：

2016 PHOTONICS NORTH (PN) | 2016年

关键词：

mid-infrared; Si-Ge waveguides; mode confinement; broad band single mode polarization; SILICON;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Graded Si1-xGex waveguides with tight mode confinement in a broadband range of mid-infrared wavelengths are presented. Optimum TM mode confinement is observed due to the vertical variation of the refractive index. These waveguides show good potential for implementation as passive elements in mid-infrared optical circuits where strong mode confinement is required for a broadband range of wavelengths.

引用

页数：1

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