Plasma-Enhanced Pulsed Laser Deposition (PE-PLD) is a technique for depositing metal oxide thin films that combines traditional PLD of metals with a low-temperature oxygen background plasma. This proof-of-concept study shows that PE-PLD can deposit copper oxide and zinc oxide films of similar properties to ones deposited using traditional PLD, without the need for substrate heating. Varying the pressure of the background plasma changed the stoichiometry and structure of the films. Stoichiometric copper oxide and zinc oxide films were deposited at pressures of 13 Pa and 7.5 Pa, respectively. The deposition rate was similar to 5 nm/min and the films were polycrystalline with a crystal size in the range of 3 nm-15 nm. The dominant phase for ZnO was (110) and for CuO, they were (020) and (111<mml:mo accent="true"><overbar></mml:mover>), where (020) is known as a high-density phase not commonly seen in PLD films. The resistivity of the CuO film was 0.76 +/- 0.05 Omega cm, in line with films produced using traditional PLD. Since PE-PLD does not use substrate heating or post-annealing, and the temperature of the oxygen background plasma is low, the deposition of films on heat-sensitive materials such as plastics is possible. Stoichiometric amorphous zinc oxide and copper oxide films were deposited on polyethylene (PE) and polytetrafluoroethylene (PFTE).
机构:
Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, TaiwanNatl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan
Huang, S. -H.
Chou, Y. -C.
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Natl Chi Nan Univ, Dept Elect Engn, Nantou 54561, TaiwanNatl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan
Chou, Y. -C.
Chou, C. -M.
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Taichung Vet Gen Hosp, Div Pediat Surg, Dept Surg, Taichung 40705, Taiwan
Natl Yang Ming Univ, Dept Med, Taipei 112, TaiwanNatl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan
Chou, C. -M.
Hsiao, V. K. S.
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Natl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, TaiwanNatl Chi Nan Univ, Dept Appl Mat & Optoelect Engn, Nantou 54561, Taiwan
机构:
Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South KoreaKorea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, JH
Lee, JB
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Lee, JB
Kim, H
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, H
Kim, D
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Kim, D
Ihm, Y
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
Ihm, Y
Choo, WK
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机构:Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea