Complementary Logic Circuits Based on High-Performance n-Type Organic Electrochemical Transistors

被引:252
|
作者
Sun, Hengda [1 ]
Vagin, Mikhail [1 ,2 ]
Wang, Suhao [1 ]
Crispin, Xavier [1 ]
Forchheimer, Robert [3 ]
Berggren, Magnus [1 ]
Fabiano, Simone [1 ]
机构
[1] Linkoping Univ, Dept Sci & Technol, Lab Organ Elect, SE-60174 Norrkoping, Sweden
[2] Linkoping Univ, Dept Phys Chem & Biol, SE-58183 Linkoping, Sweden
[3] Linkoping Univ, Dept Elect Engn, SE-58183 Linkoping, Sweden
基金
瑞典研究理事会;
关键词
accumulation mode OECTs; ladder-type polymers; n-type polymers; transconductance; FIELD-EFFECT TRANSISTORS; CHARGE-TRANSPORT; MODE;
D O I
10.1002/adma.201704916
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organic electrochemical transistors (OECTs) have been the subject of intense research in recent years. To date, however, most of the reported OECTs rely entirely on p-type (hole transport) operation, while electron transporting (n-type) OECTs are rare. The combination of efficient and stable p-type and n-type OECTs would allow for the development of complementary circuits, dramatically advancing the sophistication of OECT-based technologies. Poor stability in air and aqueous electrolyte media, low electron mobility, and/or a lack of electrochemical reversibility, of available high-electron affinity conjugated polymers, has made the development of n-type OECTs troublesome. Here, it is shown that ladder-type polymers such as poly(benzimidazobenzophenanthroline) (BBL) can successfully work as stable and efficient n-channel material for OECTs. These devices can be easily fabricated by means of facile spray-coating techniques. BBL-based OECTs show high transconductance (up to 9.7 mS) and excellent stability in ambient and aqueous media. It is demonstrated that BBL-based n-type OECTs can be successfully integrated with p-type OECTs to form electrochemical complementary inverters. The latter show high gains and large worst-case noise margin at a supply voltage below 0.6 V.
引用
收藏
页数:7
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