Metallic Nanowires by Full Wafer Stencil Lithography

被引：90

作者：

Vazquez-Mena, O. ^{[1
]}

Villanueva, G. ^{[1
]}

Savu, V. ^{[1
]}

Sidler, K. ^{[1
]}

van den Boogaart, M. A. F. ^{[1
]}

Brugger, J. ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Microsyst Lab, CH-1015 Lausanne, Switzerland

来源：

NANO LETTERS | 2008年 / 8卷 / 11期

基金：

瑞士国家科学基金会;

关键词：

D O I：

10.1021/nl801778t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Aluminum and gold nanowires were fabricated using 100 mm stencil wafers containing nanoslits fabricated with a focused ion beam. The stencils were aligned and the nanowires deposited on a substrate with predefined electrical pads. The morphology and resistivity of the wires were studied. Nanowires down to 70 nm wide and 5 mu m long have been achieved showing a resistivity of 10 mu Omega cm for Al and 5 mu Omega cm for Au and maximum current density of similar to 10(8) A/cm(2). This proves the capability of stencil lithography for the fabrication of metallic nanowires on a full wafer scale.

引用

页码：3675 / 3682

页数：8

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