Point defects generated by direct-wafer bonding of silicon

被引：2

作者：

Dózsa, L ^{[1
]}

Szentpáli, B

Pasquariello, D

Hjort, K

机构：

[1] Hungarian Acad Sci, Res Inst Tech Phys & Mat Sci, H-1525 Budapest, Hungary

[2] Uppsala Univ, Dept Mat Sci, Microstruct Technol Grp, SE-75121 Uppsala, Sweden

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2002年 / 31卷 / 02期

关键词：

Si; wafer bonding; point defects;

D O I：

10.1007/s11664-002-0156-x

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-purity float zone (FZ) silicon p- and n-type wafers were directly bonded hydrophobically at 700degreesC and 1050degreesC. Electrical I-V and capacitance-voltage (C-V) characterization was performed on p-n junctions of 2-mm square chips cut out from properly bonded areas of the wafers. The point defects were investigated by Deep Level Transient Spectroscopy (DLTS). As expected, annealing at 700degreesC resulted in high void density, while at 1050degreesC void-free bonded structures were formed. The I-V characteristics were dominated by recombination at the bonded interface and by the resistance of the n-type wafer. The point defects identified by DLTS are divacancy, vacancy-phosphor, and vacancy-oxygen complexes. These defects explain qualitatively the observed characteristics of the samples.

引用

页码：113 / 118

页数：6

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