Characteristics of surface acoustic wave convolver in the monolithic metal-zinc oxide-silicon nitride-silicon dioxide-silicon structure

The nonlinear analysis of the metal-insulator semiconductor shows that the ac currents charging the interface traps lead to large dc operating voltage and an inefficient operation of the monolithic convolvers. These interface traps are annihilated during a low temperature anneal, which utilizes hydrogen atoms implanted underneath the SiO2-Si interface. The overlay piezoelectric ZnO film in the metal-ZnO-Si3N4-SiO2-Si structure is protected from the influx of hydrogen atoms by an interposed silicon nitride layer. Hydrogen implantation and rapid thermal annealing steps are integrated in the process sequence of realizing an efficient metal-ZnO-Si3N4-SiO2-Si monolithic surface acoustic wave convolver. (C) 2002 American Institute of Physics.