Ferroelectric properties of SrRuO3/BaTiO3/SrRuO3 ultrathin film capacitors free from passive layers - art. no. 072909

被引：59
|
作者：
Kim, YS [1 ]
Jo, JY
Kim, DJ
Chang, YJ
Lee, JH
Noh, TW
Song, TK
Yoon, JG
Chung, JS
Baik, SI
Kim, YW
Jung, CU
机构：
[1] Seoul Natl Univ, ReCOE, Seoul 151747, South Korea
[2] Seoul Natl Univ, Sch Phys, Seoul 151747, South Korea
[3] Changwon Natl Univ, Dept Ceram Sci & Engn, Chang Won 641773, Kyungnam, South Korea
[4] Univ Suwon, Dept Phys, Suwon 445743, Gyunggi, South Korea
[5] Soongsil Univ, Dept Phys, Seoul 156743, South Korea
[6] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151744, South Korea
[7] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, Gyunggi, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 07期
关键词：
D O I：
10.1063/1.2174100
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Structural studies on ultrathin SrRuO3/BaTiO3/SrRuO3 capacitors, with BaTiO3 thicknesses of between 5 nm and 30 nm, show well-defined interfaces between ferroelectric BaTiO3 and electrode SrRuO3 layers. In these capacitors, we cannot observe any extrinsic electrical effects due to either the formation of an insulating interfacial passive layer or passive-layer-induced charge injection. Such high-quality interfaces result in very good fatigue endurance, even for the 5 nm thick BaTiO3 capacitor.
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页数：3
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