The effect of grain boundary characteristics on the morphology of the crystal/melt interface of multicrystalline silicon

被引：27
|
作者：
Fujiwara, Kozo [1 ]
Ishii, Masaya [1 ]
Maeda, Kensaku [1 ]
Koizumi, Haruhiko [1 ]
Nozawa, Jun [1 ]
Uda, Satoshi [1 ]
机构：
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan
来源：
SCRIPTA MATERIALIA | 2013年 / 69卷 / 03期
关键词：
Crystal/melt interface; Grain boundary character; Solidification; Impurity Segregation; GROWTH; DENDRITES; MECHANISM;
D O I：
10.1016/j.scriptamat.2013.04.015
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The effect of grain boundary characteristics on the crystal/melt interface morphology during the unidirectional solidification of multicrystalline Si was studied by in situ observations. It was shown that sharp and smooth grooves were formed at the crystal/melt interfaces at Sigma 27 and random grain boundaries, whereas no grooves were formed at Sigma 3 {1 1 1} twin boundaries. We explain the reasons why the grooves form at grain boundaries and discuss the impurity segregation at the grain boundary grooves on the crystal/melt interface. (c) 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：266 / 269
页数：4
相关论文
共 50 条
  • [41] A deep level transient spectroscopy study on the interface states across grain boundaries in multicrystalline silicon
    Chen, J.
    Cornagliotti, E.
    Simoen, E.
    Hieckmann, E.
    Weber, J.
    Poortmans, J.
    PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (08): : 277 - 279
  • [42] TEM Characterization of Near Sub-Grain Boundary Dislocations in Directionally Solidified Multicrystalline Silicon
    Kivambe, Maulid
    Stokkan, Gaute
    Ervik, Torunn
    Ryningen, Birgit
    Lohne, Otto
    GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XIV, 2011, 178-179 : 307 - +
  • [43] Grain boundary engineering of high performance multicrystalline silicon: Control of iron contamination at the ingot edge
    Hu, Dongli
    Yuan, Shuai
    Yu, Xuegong
    He, Liang
    Xu, Yunfei
    Zhang, Xueri
    Yang, Deren
    SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2017, 171 : 131 - 135
  • [44] First-Principles Calculations on Σ3 Grain Boundary Transition Metal Impurities in Multicrystalline Silicon
    Suvitha, Ambigapathy
    Venkataramanan, Natarajan Sathiyamoorthy
    Sahara, Ryoji
    Mizuseki, Hiroshi
    Kawazoe, Yoshiyuki
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2010, 49 (04)
  • [45] Interactions between metals and different grain boundary types and their impact on multicrystalline silicon device performance
    Buonassisi, Tonio
    Pickett, Matthew D.
    Istratov, Andrei A.
    Sauar, Erik
    Lommasson, Timothy C.
    Marstein, Erik
    Pernau, Thomas
    Clark, R. F.
    Narayanan, S.
    Heald, Steven M.
    Weber, Eicke R.
    CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS 1 AND 2, 2006, : 944 - 947
  • [46] Impacts of spatially reduced grain boundary recombination regions on multicrystalline silicon solar cell performance
    Nouri, H
    Dimassi, W
    Bouaïcha, M
    Hajji, M
    Boujmil, MF
    Saâdoun, M
    Bessaïs, B
    Ezzaouia, H
    Bennaceur, R
    THIN SOLID FILMS, 2004, 451 : 312 - 315
  • [47] Grain boundary segregation in multicrystalline silicon: correlative characterization by EBSD, EBIC, and atom probe tomography
    Stoffers, Andreas
    Cojocaru-Miredin, Oana
    Seifert, Winfried
    Zaefferer, Stefan
    Riepe, Stephan
    Raabe, Dierk
    PROGRESS IN PHOTOVOLTAICS, 2015, 23 (12): : 1742 - 1753
  • [48] Grain boundary characterization in multicrystalline silicon using joint EBSD, EBIC, and atom probe tomography
    Stoffers, Andreas
    Cojocaru-Miredin, Oana
    Breitenstein, Otwin
    Seifert, Winfried
    Zaefferer, Stefan
    Raabe, Dierk
    2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC), 2014, : 42 - 46
  • [49] Effect of the Parameters of Grain Misorientation in Multicrystalline Silicon on the Formation of the SEM Image Contrast
    S. M. Peshcherova
    A. G. Chueshova
    M. D. Zimin
    E. A. Ludina
    L. A. Pavlova
    A. I. Nepomnyashchikh
    S. M. Zubritcky
    M. Yu. Ribyakov
    L. K. Dovchenko
    Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, 16 : 122 - 127
  • [50] Laue scanner: A new method for determination of grain orientations and grain boundary types of multicrystalline silicon on a full wafer scale
    Lehmann, Toni
    Trempa, Matthias
    Meissner, Elke
    Zschorsch, Markus
    Reimann, Christian
    Friedrich, Jochen
    ACTA MATERIALIA, 2014, 69 : 1 - 8
12345