Ultra-wideband SiGe low-noise amplifier

被引：2
|
作者：
Shi, B. [1 ]
Chia, Y. W. [1 ]
机构：
[1] Inst Infocomm Res, Singapore 117674, Singapore
来源：
ELECTRONICS LETTERS | 2006年 / 42卷 / 08期
关键词：
5;
D O I：
10.1049/el:20064413
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low-noise amplifier (LNA) for ultra-wideband (UWB) is presented. The LNA, consisting of two gain stages in multiple feedback loops, achieves a flat power gain of a nominal 20 dB and a noise figure of 2.8-4.7 dB over the 3.1-10.6 GHz UWB band. Implemented in a 0.25 mu m SiGe BiCMOS process, the amplifier occupies 0.34 mm(2) and draws 11 mA from a 2.7 V supply.
引用
收藏
页码：462 / 463
页数：2
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