Current-voltage behavior of AlGaAs/InGaAs pHEMT structures and the effect of optical illumination

被引：3
|
作者：
Soetedjo, H [1 ]
Nizam, OM [1 ]
Sabtu, I [1 ]
Sazli, JM [1 ]
Yusof, A [1 ]
Razman, YM [1 ]
Mat, AFA [1 ]
机构：
[1] Univ Putra Malaysia, MTDC, Microelect Unit, TM R&D Sdn Bhd Malaysia, Serdang 43400, Selangor, Malaysia
来源：
MICROELECTRONICS JOURNAL | 2006年 / 37卷 / 06期
关键词：
pHEMT; AlGaAs/InGaAs; optical illumination; sensor;
D O I：
10.1016/j.mejo.2005.09.025
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Various pseudomorphic High Electron Mobility Transistor (pHEMT) structures of AlGaAs/InGaAs alloys have been observed their current-voltage behavior. The tungsten probes were used for a measurement the structures by ramping the voltage from -5 to 5 V and measure the electrical current. Measurement was carried out at room temperature and also under optical illumination. From the measurement, the electrical current was found to increase as the increase of Al content in the AlGaAs alloys layer in the pHEMT structure. This phenomenon was supported by the decrease of sheet resistance as obtained from Hall effect measurement. Under visible light illumination, the current-voltage behavior of pHEMT structure was observed to vary as the light power density was varied for 0, 25 and 55 mu W/cm. (C) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：480 / 482
页数：3
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