Analysis of Coupling Capacitance between TSV and Adjacent RDL Interconnections

被引：0

作者：

Mei, Zheng ^{[1
]}

Dong, Gang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 South Taibai Rd, Xian 710071, Shaanxi, Peoples R China

来源：

2017 IEEE CPMT SYMPOSIUM JAPAN (ICSJ) | 2017年

关键词：

Coupling capacitance; redistribution layers; three-dimensional (3-D) integrated circuit (IC); through silicon via; SILICON; 3-D; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes an equivalent model of the coupling capacitance between TSVs and adjacent RDL. Based on the scalar potential integral equation and cylindrical accumulation mode basis functions, an efficient method of extracting the coupling capacitance is present. The scalability of the proposed model is verified by simulation and our results show that an accuracy of 10% is achieved from the analytic models, compared with the values that were simulated by 3-D numerical field solvers.

引用

页码：243 / 246

页数：4

共 50 条

[21] Analysis and optimization of TSV-TSV coupling in three-dimensional integrated circuits
Zhao Yingbo
Dong Gang
Yang Yintang
JOURNAL OF SEMICONDUCTORS, 2015, 36 (04)
[22] On the coupling between adjacent turbulent jets
LePera, S.D.
Vandsburger, U.
American Society of Mechanical Engineers, Fluids Engineering Division (Publication) FED, 2002, 257 (1 B): : 1455 - 1462
[23] Dynamic Analysis of Multispan Viaducts with Weak Coupling between Adjacent Spans
Liu, Kai
Lombaert, Geert
De Roeck, Guido
JOURNAL OF BRIDGE ENGINEERING, 2014, 19 (01) : 83 - 90
[24] Analysis and evaluation of coupling between adjacent TSVs with considering the discharging path
Zhao, Yingbo
Dong, Gang
Yang, Yintang
Zheng, Junping
IEICE ELECTRONICS EXPRESS, 2015, 12 (05):
[25] ANALYSIS OF COUPLING NOISE BETWEEN ADJACENT BIT LINES IN MEGABIT DRAMS
KONISHI, Y
KUMANOYA, M
YAMASAKI, H
DOSAKA, K
YOSHIHARA, T
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1989, 24 (01) : 35 - 42
[26] Steady state electrical–thermal coupling analysis of TSV
Jingrui Chai
Gang Dong
Zheng Mei
Weijun Zhu
JournalofSemiconductors, 2018, 39 (09) : 86 - 91
[27] Capacitance between adjacent edge channels at quantum Hall plateaux
Oto, K.
Arai, K.
Uno, S.
Takaoka, S.
Murase, K.
Microelectronic Engineering, 1999, 47 (01): : 27 - 29
[28] Capacitance between adjacent edge channels at quantum Hall plateaux
Oto, K
Arai, K
Uno, S
Takaoka, S
Murase, K
MICROELECTRONIC ENGINEERING, 1999, 47 (1-4) : 27 - 29
[29] Transient Analysis of TSV Equivalent Circuit Considering Nonlinear MOS Capacitance Effects
Piersanti, Stefano
de Paulis, Francesco
Orlandi, Antonio
Swaminathan, Madhavan
Ricchiuti, Vittorio
IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 2015, 57 (05) : 1216 - 1225
[30] Efficient Computation of Capacitive Coupling Between Planar and Cylindrical Interconnections
Han, Ki Jin
Swaminathan, Madhavan
2014 IEEE ELECTRICAL DESIGN OF ADVANCED PACKAGING & SYSTEMS SYMPOSIUM (EDAPS), 2014, : 13 - 16

← 1 2 3 4 5 →