Analysis of Coupling Capacitance between TSV and Adjacent RDL Interconnections

被引：0

作者：

Mei, Zheng ^{[1
]}

Dong, Gang ^{[1
]}

机构：

[1] Xidian Univ, Sch Microelect, 2 South Taibai Rd, Xian 710071, Shaanxi, Peoples R China

来源：

2017 IEEE CPMT SYMPOSIUM JAPAN (ICSJ) | 2017年

关键词：

Coupling capacitance; redistribution layers; three-dimensional (3-D) integrated circuit (IC); through silicon via; SILICON; 3-D; MODEL;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper proposes an equivalent model of the coupling capacitance between TSVs and adjacent RDL. Based on the scalar potential integral equation and cylindrical accumulation mode basis functions, an efficient method of extracting the coupling capacitance is present. The scalability of the proposed model is verified by simulation and our results show that an accuracy of 10% is achieved from the analytic models, compared with the values that were simulated by 3-D numerical field solvers.

引用

页码：243 / 246

页数：4

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