Electrical properties of Cr-doped HgSe single crystals

被引：0
|
作者：
Rarenko, IM
Paranchich, YS
机构：
来源：
INORGANIC MATERIALS | 1997年 / 33卷 / 03期
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electrical conductivity, Hall coefficient, mobility, and magnetoresistance of freshly prepared HgSe[Cr] single crystals and crystals stored for a year under ambient conditions were measured in the temperature range 77-400 K. The effect of low-temperature annealing (200 degrees C) in Hg and Se vapors on the electrical properties of the crystals was investigated.
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页码：239 / 242
页数：4
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