Electronic transport in quasiperiodic decagonal aluminum -: art. no. 024205

被引:7
|
作者
Krajcí, M
Hafner, J
Mihalkovic, M
机构
[1] Univ Vienna, Inst Mat Phys, A-1090 Vienna, Austria
[2] Univ Vienna, Ctr Computat Mat Sci, A-1090 Vienna, Austria
[3] Slovak Acad Sci, Inst Phys, SK-84228 Bratislava, Slovakia
[4] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany
关键词
D O I
10.1103/PhysRevB.65.024205
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present ab initio calculations of the electronic transport properties of a hypothetical monoatomic quasiperiodic system, decagonal aluminum (d-Al). Our aim is to study the influence of quasiperiodicity on the transport properties at the example of a system which is sufficiently realistic to represent real Al-based quasicrystals, but does not involve the additional complexity of a strong s,p-d hybridization which determines the properties of many crystalline and quasicrystalline Al-transition-metal alloys. The structure of d-Al is based on the densest known quasicrystalline sphere packing, the local atomic arrangement is closely related to crystalline face-centred-cubic Al. The investigation of the transport properties of a series of six periodic approximants with increasing Linear dimensions is based on a self-consistent calculation of the electronic eigenstates and the Kabo-Greenwood formula. A detailed scaling analysis demonstrates small deviations of the eigenstates from extended behavior and shows that the transport properties belong to the sub-ballistic regime, which a scaling exponent of the electronic diffusivity of betasimilar to0.6 that is somewhat larger than the quantum-diffusion limit (beta = 0.5), but distinctly smaller than for ballistic transport (beta = 1). In this sub-ballistic or overdiffusive regime them conductivity diverges in the thermodynamic limit, leading to metallic behavior.
引用
收藏
页码:242051 / 2420514
页数:14
相关论文
共 50 条
  • [21] Driven, underdamped Frenkel-Kontorova model on a quasiperiodic substrate -: art. no. 017203
    Vanossi, A
    Röder, J
    Bishop, AR
    Bortolani, V
    PHYSICAL REVIEW E, 2001, 63 (01):
  • [22] Ab initio modeling of quantum transport properties of molecular electronic devices -: art. no. 245407
    Taylor, J
    Guo, H
    Wang, J
    PHYSICAL REVIEW B, 2001, 63 (24)
  • [23] Electronic states in a quantum lens -: art. no. 125319
    Rodríguez, AH
    Trallero-Giner, C
    Ulloa, SE
    Marín-Antuña, J
    PHYSICAL REVIEW B, 2001, 63 (12)
  • [24] Electronic structure of a bismuth bilayer -: art. no. 113102
    Ast, CR
    Höchst, H
    PHYSICAL REVIEW B, 2003, 67 (11):
  • [25] Emerging behavior in electronic bidding -: art. no. 016102
    Yang, I
    Jeong, H
    Kahng, B
    Barabási, AL
    PHYSICAL REVIEW E, 2003, 68 (01)
  • [26] Nonequilibrium electronic transport of 4,4′-bipyridine molecular junction -: art. no. 184712
    Wu, XJ
    Li, QX
    Huang, J
    Yang, JL
    JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (18):
  • [27] First-principles modeling of electronic transport in π-stacked molecular junctions -: art. no. 033712
    Liu, XY
    Raynolds, JE
    Wells, C
    Welch, J
    Cale, TS
    JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
  • [28] Magnetization-dependent electronic transport in Eu-based hexaborides -: art. no. 212410
    Wigger, GA
    Wälti, C
    Ott, HR
    Bianchi, AD
    Fisk, Z
    PHYSICAL REVIEW B, 2002, 66 (21): : 1 - 4
  • [29] Magnetic, thermodynamic, electronic, and transport properties of CeNi4Al -: art. no. 064413
    Tolinski, T
    Kowalczyk, A
    Chelkowska, G
    Pugaczowa-Michalska, M
    Andrzejewski, B
    Ivanov, V
    Szewczyk, A
    Gutowska, M
    PHYSICAL REVIEW B, 2004, 70 (06): : 064413 - 1
  • [30] Electronic and crystallographic structure of apatites -: art. no. 134106
    Calderín, L
    Stott, MJ
    Rubio, A
    PHYSICAL REVIEW B, 2003, 67 (13)