A Compact V-Band Active SiGe Power Detector

被引：0
|
作者：
Zhang, Jian [1 ]
Fusco, Vincent [1 ]
Zhang, Yunhua [1 ]
机构：
[1] Queens Univ Belfast, Inst Elect Commun & Informat Technol ECIT, Belfast, Antrim, North Ireland
来源：
2012 7TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2012年
关键词：
MMIC microwave millimeterwave power detector; OOK/ASK; SiGe HBT; AMPLIFIER;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A compact V-band active power detector using Infineon 0.35 mu m SiGe HBT process (f(T) / f(max) = 170/250 GHz) is described. The total chip area is only 0.35x0.8 mm2 including all pads. This design exhibits a dynamic range larger than 20 dB over the frequency range from 55 GHz to 67 GHz. It also offers a simple and low-power application potential as an envelop detector in multi-Gbps high data rate demodulators for OOK/ASK etc.
引用
收藏
页码：528 / 531
页数：4
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