Multi-wafer MBE grown InP-based DHBTs for millimeterwave and digital applications

被引：0

作者：

Driad, R ^{[1
]}

Lösch, R ^{[1
]}

Schneider, K ^{[1
]}

Makon, RE ^{[1
]}

Ludwig, M ^{[1
]}

Weimann, G ^{[1
]}

机构：

[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3 NO 3 | 2006年 / 3卷 / 03期

关键词：

D O I：

10.1002/pssc.200564102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the development and performance of a complete InP-based DHBT manufacturable technology from material growth to device and integrated circuits realizations. The InGaAs/InP DHBTs were grown in a multi-wafer solid phosphorus MBE system. High frequency devices with an effective emitter area of 4.8 mu m(2) exhibited peak f(T) and f(MAX) values of 250 and 270 GHz, respectively, at a collector current density of similar to 4 mA/mu m(2). Using this technology, distributed amplifiers and low power consumption selectors, have been successfully fabricated and tested above 80 Gbit/s. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.

引用

页码：456 / +

页数：3

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