Challenges in Visible Wavelength Detection Using Optically Transparent Oxide Semiconductors

被引:0
|
作者
Lee, Sungsik [1 ]
Nathan, Arokia [2 ]
Robertson, John [2 ]
机构
[1] UCL, London Ctr Nanotechnol, London, England
[2] Univ Cambridge, Ctr Adv Photon & Elect, Cambridge, England
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We discuss the development of amorphous oxide semiconductor technology for optical sensor applications. In particular, we discuss the challenges of detecting visible wavelengths using this family of materials, which are known to be optically transparent due to their relatively large bandgap energy. One of the main issues with amorphous oxide semiconductors (AOS) is the ionization of the oxygen vacancies (V-O) under illumination. While this can be beneficial in terms of optical absorption and high photoconductive gain, it can give rise to persistent photoconductivity (PPC). We will present techniques to overcome the PPC, and discuss how to achieve the high photoconductive gain for image sensor applications.
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页码:216 / 219
页数:4
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