Preparation and Characterization of Ba(ZrxTi1-x)O3 Thin Films Using Reactive Sputtering Method

被引：0

作者：

Kim, Jin Woong ^{[1
]}

Osumi, Tsuyoshi ^{[1
]}

Mastuoka, Masashi ^{[1
]}

Tai, Takeshi ^{[1
]}

Nishide, Masamichi ^{[1
]}

Funakubo, Hiroshi ^{[2
]}

Shima, Hiromi ^{[1
]}

Nishida, Ken ^{[1
]}

Yamamoto, Takashi ^{[1
]}

机构：

[1] Natl Def Acad, Dept Commun Engn, Yokosuka, Kanagawa 2398686, Japan

[2] Tokyo Inst Technol, Dept Mat Sci & Engn, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 09期

关键词：

ELECTRICAL-PROPERTIES; DIELECTRIC-PROPERTIES; CRYSTAL-STRUCTURE; TEMPERATURE; CAPACITORS; DEPOSITION; CERAMICS;

D O I：

10.1143/JJAP.51.09LA01

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba(ZrxTi1-x)O-3 (BZT) thin films with different Zr contents were deposited on (100) MgO and (100) Pt/(100) MgO substrates by RF-magnetron reactive sputtering using metal targets. The BZT (0 < x < 0.89) thin films had a single perovskite phase with only (001)/(100) orientation. In all cases, the ratio of Ba/Ti was stoichiometric according to X-ray fluorescence spectrometry (WDX) measurement. Atomic force microscopy (AFM) study proved that BZT films possess a dense microstructure without cracks or voids. The grain size was found to decrease with increasing of Zr content. The effect of Zr content on the dielectric constant and leakage current was studied. BZT thin films showed ferroelectric-to-paraelectric properties with increasing Zr content and excellent leakage properties according to measurements of electrical properties. These results indicated that we succeeded in depositing high-quality and low-sputter-damage BZT thin films by reactive sputtering using metal targets. (c) 2012 The Japan Society of Applied Physics

引用

页数：5

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