Improved thermoelectric properties of hole-doped Bi2-x Nax Ba2Co2Oy ceramics

被引:16
|
作者
Gao, Wenxian [1 ,2 ]
Wang, Guangjiang [3 ]
Li, Xinjian [1 ,2 ]
Hu, Xing [1 ,2 ]
Song, Hongzhang [1 ,2 ]
机构
[1] Zhengzhou Univ, Minist Educ, Key Lab Mat Phys, Zhengzhou 450052, Peoples R China
[2] Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450052, Peoples R China
[3] Henan Radio & Televis Univ, Sch Mech & Elect Engn, Zhengzhou 450046, Peoples R China
来源
关键词
Thermoelectric properties; element doping; Bi-2_xNaxBa2Co2Oy; PERFORMANCE; POWER;
D O I
10.1142/S0217979217500424
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this work, Bi-2_xNaxBa2Co2Oy (x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25 and 0.30) ceramic samples were prepared by the conventional solid phase method. The influence of Na element doping on the thermoelectric properties of samples was investigated from 300 K to 950 K. Compared with undoped sample, the Seebeck coefficients of Na-doped samples have only a slight decrease. While, the electrical resistivity of the Na-doped samples reduces, for Bi-2_xNaxBa2Co2Oy ceramic samples with x <= 0.15, the electrical resistivity decreases with increasing Na doping amounts due to the hole-doping effect. In addition, its temperature-dependent resistivity exhibits metallic electrical conductivity behavior. While, the samples with x > 0.20 exhibit semiconductor electrical conductivity behavior at the temperature range of 473-823 K, because of the significant reduction of the electrical resistivity and the slight decrease of Seebeck coefficients, the power factors of the doped samples get a significant improvement. For the most suitable doped sample Bi-1.(a)Nao.2Ba2Co2Oy, its ZT value can reach a better value of 0.2 at 873 K.
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页数:9
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