Anomalous Hall effect in IV-VI magnetic semiconductors

被引：6
|
作者：
Dyrdal, A. [1 ]
Dugaev, V. K. [2 ,3 ,4 ]
Barnas, J. [1 ,5 ]
机构：
[1] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland
[2] Rzeszow Univ Technol, Dept Phys, PL-35959 Rzeszow, Poland
[3] Univ Tecn Lisboa, Inst Super Tecn, CFIF, P-1049001 Lisbon, Portugal
[4] Univ Tecn Lisboa, Inst Super Tecn, Dept Phys, P-1049001 Lisbon, Portugal
[5] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
来源：
PHYSICAL REVIEW B | 2008年 / 78卷 / 24期
关键词：
geometry; Hall effect; IV-VI semiconductors; lead compounds; magnetic impurities; magnetic semiconductors; magnetisation; manganese compounds; spin-orbit interactions; tin compounds; topology;
D O I：
10.1103/PhysRevB.78.245208
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Topological contribution to the anomalous Hall effect in IV-VI narrow-gap semiconductors with a nonzero spontaneous magnetization due to magnetic impurities is considered theoretically. The off-diagonal conductivity is calculated in the relativistic model of the IV-VI semiconductors. Spin-orbit interaction in these compounds is strong and cannot be treated perturbatively. Therefore, it is included in the Hamiltonian of a clean (defect-free) system. Geometrical interpretation of the topological contribution to the Hall conductivity is also briefly discussed.
引用
收藏
页数：9
相关论文
共 50 条
  • [21] Optical properties of graphene and IV-VI semiconductors
    Falkovsky, L. A.
    PHYSICS-USPEKHI, 2008, 51 (09) : 887 - 897
  • [22] IV-VI ferromagnetic semiconductors recent studies
    Dobrowolski, W.
    Arciszewska, M.
    Brodowska, B.
    Domukhovski, V.
    Dugaev, V. K.
    Grzeda, A.
    Kuryliszyn-Kudelska, I.
    Wojcik, M.
    Slynko, E. I.
    SCIENCE OF SINTERING, 2006, 38 (02) : 109 - 116
  • [23] CHARGE STATES OF VACANCIES IN IV-VI SEMICONDUCTORS
    PANKRATOV, OA
    POVAROV, PP
    SOLID STATE COMMUNICATIONS, 1988, 66 (08) : 847 - 853
  • [24] LOCAL DIPOLE FORMATION IN IV-VI SEMICONDUCTORS
    Holm, Kristoffer
    Roth, Nikolaj
    Brummerstedt Iversen, Bo
    ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES, 2019, 75 : E444 - E444
  • [25] PHYSICOCHEMICAL INTERACTION OF METALS WITH IV-VI SEMICONDUCTORS
    TOMASHIK, VN
    GRYTSIV, VI
    INORGANIC MATERIALS, 1995, 31 (08) : 946 - 948
  • [26] RAMAN INVESTIGATION OF FERROELECTRICITY IN IV-VI SEMICONDUCTORS
    SHAND, ML
    BURSTEIN, E
    BRILLSON, LJ
    FERROELECTRICS, 1974, 7 (1-4) : 283 - 285
  • [27] IV-VI semimagnetic semiconductors: Recent developments
    Story, T
    ACTA PHYSICA POLONICA A, 1998, 94 (02) : 189 - 197
  • [28] Diluted magnetic semiconductors based on II-VI, III-VI, and IV-VI compounds
    Lashkarev, G. V.
    Sichkovskiyi, V. I.
    Radchenko, M. V.
    Karpina, V. A.
    Butorin, P. E.
    Dmitriev, O. I.
    Lazorenko, V. I.
    Slyn'ko, E. I.
    Lytvyn, P. M.
    Jakiela, R.
    Knoff, W.
    Story, T.
    Aleshkevych, P.
    LOW TEMPERATURE PHYSICS, 2009, 35 (01) : 62 - 70
  • [29] Magnetic properties of clusters in IV-VI and II-IV-V2 diluted magnetic semiconductors
    Gorska, M.
    Kilanski, L.
    Podgorni, A.
    Dobrowolski, W.
    Szymczak, R.
    Anderson, J. R.
    Fedorchenko, I. V.
    Marenkin, S. F.
    Slynko, V. E.
    Slynko, E. I.
    INTERNATIONAL SYMPOSIUM ON CLUSTERS AND NANOMATERIALS, 2017, 10174
  • [30] MAGNETIC IMPURITY INTERACTIONS IN A QUANTUM-WELL ON THE BASE OF IV-VI SEMICONDUCTORS
    DUGAEV, VK
    LITVINOV, VI
    PETROV, PP
    SUPERLATTICES AND MICROSTRUCTURES, 1994, 16 (04) : 413 - 417
12345