Photoexcitation screening of the built-in electric field in ZnO single quantum wells

被引：31

作者：

Makino, T. ^{[1
]}

Segawa, Y. ^{[2
]}

Tsukazaki, A. ^{[3
]}

Ohtomo, A. ^{[3
]}

Kawasaki, M. ^{[1
,2
,3
,4
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res, Sendai, Miyagi 9808577, Japan

[2] RIKEN, ASI, CMRG, Wako, Saitama 3510198, Japan

[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

[4] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 12期

关键词：

D O I：

10.1063/1.2981523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnO/Mg0.22Zn0.78O quantum wells were studied by excitation-intensity-dependent luminescence at 10 K. The samples were grown by laser molecular-beam epitaxy on ScAlMgO4 substrates to evaluate the well width dependence (1 to 10 nm) of exciton transition energies. Under weak excitation, the photoluminescence shows a quantum-confined Stark effect for the wide wells. The well width dependences of the experimental transition energies are compared with previously reported calculations to evaluate the electric field due to spontaneous and piezoelectric polarizations. The internal electric field is comparable with 650 kV/cm. With an increase in excitation intensity, blueshift of the luminescence was observed, suggesting photoexcitation screening of electric fields. (C) 2008 American Institute of Physics.

引用

页数：3

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