INFLUENCE OF NONLINEAR ELECTRON MOBILITY ON RESPONSE TIME IN PHOTOREFRACTIVE SEMICONDUCTOR QUANTUM WELLS

被引:5
|
作者
Wichtowski, Marek [1 ]
Ziolkowski, Andrzej [1 ]
Weinert-Raczka, Ewa [1 ]
Jablonski, Blazej [1 ]
Karwecki, Wojciech [1 ]
机构
[1] Westpommerian Univ Technol Szczecin, Fac Elect Engn, PL-70310 Szczecin, Poland
关键词
Photorefractive multiple quantum wells; hot-electron transport; FRANZ-KELDYSH GEOMETRY; TRANSPORT; GRATINGS;
D O I
10.1142/S0218863512500506
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Nonlinear transport of hot electrons in semi-insulating GaAs/AlGaAs quantum wells significantly affects their photorefractive properties. In case of two waves mixing, this influence consists, among others, in an increased shift of photorefractive grating relative to light intensity distribution. The influence of nonlinear transport on grating recording time is less examined experimentally and theoretically. This study compares numerical and analytical solutions describing grating dynamics in approximation of small fringe contrast. The influence of nonlinear electron mobility on space-charge field was examined depending on external electric field intensity and on the grating constant. It was found that in the electric field range below 20 kV/cm, the nonlinear transport of electrons does not shorten the grating generation time.
引用
收藏
页数:16
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