The chemical behavior of bilayer graphene under strong covalent and noncovalent functionalization is relatively unknown compared to monolayer graphene, which has been far more widely studied. Bilayer graphene is significantly less chemically reactive than monolayer graphene, making it more challenging to study its chemistry in detail. However, bilayer graphene is increasingly attractive for electronic applications rather than monolayer graphene because of its electric-field-controllable band gap, and there is a need for a greater understanding of its chemical functionalization. In this paper, we study the covalent and noncovalent functionalization of bilayer graphene using an electrochemical process with aryl diazonium salts in the high conversion regime (D/G ratio >1), and we use Raman spectroscopic mapping and conductive atomic force microscopy (cAFM) to study the resulting changes in the physical and electronic structures. Covalent functionalization at high chemical conversion induces distinct changes in the Raman spectrum of bilayer graphene including the broadening and shift in position of the split G peak. Also, the D peak becomes active with four components. We report for the first time that the broadening of the 2D(22) and 2D(21) components is a distinct indicator of covalent functionalization, whereas the decrease in intensity of the 2D(11) and 2D(12) peaks corresponds to doping. Conductive AFM imaging shows physisorbed species from noncovalent functionalization can be removed by mechanical and electrical influence from the MM tip, and that changes in conductivity due to functionalization are inhomogeneous. These results allow one to distinguish covalent from noncovalent chemistry as a guide for further studies of the chemistry of bilayer graphene.
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Univ Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis, P-4169007 Oporto, Portugal
CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Castro, Eduardo V.
Novoselov, K. S.
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Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, EnglandUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Novoselov, K. S.
Morozov, S. V.
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Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, EnglandUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Morozov, S. V.
Peres, N. M. R.
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Univ Minho, Ctr Phys, P-4710057 Braga, Portugal
Univ Minho, Dept Fis, P-4710057 Braga, PortugalUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Peres, N. M. R.
Lopes dos Santos, J. M. B.
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Univ Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis, P-4169007 Oporto, PortugalUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Lopes dos Santos, J. M. B.
Nilsson, Johan
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Boston Univ, Dept Phys, Boston, MA 02215 USAUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Nilsson, Johan
Guinea, F.
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CSIC, Inst Ciencia Mat Madrid, E-28049 Madrid, SpainUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Guinea, F.
Geim, A. K.
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Univ Manchester, Dept Phys & Astron, Manchester M13 9PL, Lancs, EnglandUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Geim, A. K.
Castro Neto, A. H.
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Boston Univ, Dept Phys, Boston, MA 02215 USAUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
机构:
Univ Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Univ Porto, Fac Ciencias, Dept Fis, P-4169007 Oporto, PortugalUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
dos Santos, J. M. B. Lopes
Peres, N. M. R.
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Univ Minho, Ctr Fis, P-471057 Braga, Portugal
Univ Minho, Dept Fis, P-471057 Braga, PortugalUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal
Peres, N. M. R.
Castro Neto, A. H.
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Boston Univ, Dept Phys, Boston, MA 02215 USAUniv Porto, Fac Ciencias, CFP, P-4169007 Oporto, Portugal