Nano-indentation used to study pyramidal slip in GaN single crystals

The nucleation and structure of dislocations created by the nano-indentation of GaN samples with dislocation densities approximate to 10(3), 10(6) or 10(9) perpendicular to cm(2) were studied in the interest of learning how dislocations can be created to relieve the mismatch strain in ternary nitride films grown on (0001) oriented binary nitride substrates. Using transmission electron microscopy and stress analyses to assist in interpreting the nano-indentation data, we determined that the pop-ins in the indenter load vs. penetration depth curves are created by an avalanche process at stresses well above the typical yield stress. The process begins by the homogeneous formation of a basal plane screw dislocation that triggers the formation of pyramidal and other basal plane dislocations that relieve the excess stored elastic energy. It appears that pyramidal slip can occur on either the {11 (2) under bar2} or {01 (1) under bar1} planes, as there is little resistance to the cross slip of screw dislocations.