A computational efficient method for HBT intermodulation distortions and two-tone characteristics simulation

被引：0
|
作者：
Huang, KY [1 ]
Li, YM [1 ]
Lee, CP [1 ]
Sze, SM [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001 | 2001年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone characteristics in frequency domain for HBTs were directly computed from time domain result with fast Fourier transform (FFT). Simulation results on a realistic HBT are presented to show the accuracy and efficiency of the method.
引用
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页码：226 / 229
页数：4
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