Polycrystalline silicon solar cells on mullite substrates

被引：30
|
作者：
Slaoui, A
Bourdais, S
Beaucarne, G
Poortmans, J
Reber, S
机构：
[1] CNRS, Lab PHASE, F-67037 Strasbourg, France
[2] IMEC, B-3001 Louvain, Belgium
[3] Fhy ISE, D-79100 Freiburg, Germany
来源：
SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 71卷 / 02期
关键词：
thin silicon; ceramic; photovoltaic; light-trapping;
D O I：
10.1016/S0927-0248(01)00063-0
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Polycrystalline silicon layers have been grown on various alumino-silicate substrates in a rapid thermal chemical vapor deposition (RTCVD) system at high temperatures (> 1000degreesC). Structural analysis shows a columnar growth with grain sizes up to 15 gm and growth rates up to 5 mum/min. Solar cell devices on this fine-grained Si material result in a short-circuit current of about 13 mA/cm(2) but a poor open-circuit voltage (<0.4V). Larger grains obtained by the zone melting recrystallization (ZMR) technique boosted the current up to 26.1 mA/cm(2) 2, thanks to the light-trapping by the mullite substrate. Best efficiency is 8.2% on a 1 cm 2 cell made on a 20mum thick poly-Si layer. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：245 / 252
页数：8
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