Low power frequency dividers in SiGe:C BiCMOS technology

被引：0

作者：

Wang, L ^{[1
]}

Sun, YM

Borngraeber, J

Thiede, A

Kraemer, R

机构：

[1] IHP GmbH, Im Technol Pk 25, D-15236 Frankfurt, Germany

[2] Univ Paderborn, D-33095 Paderborn, Germany

来源：

2006 TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, DIGEST OF PAPERS | 2006年

关键词：

frequency divider; static; dynamic; silicon germanium; HBT; millimeter wave;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports a 71 GHz static and a 103 GM regenerative dynamic frequency divider fabricated in 0.25 mu m SiGe:C HBT technology with f(T)/f(max) 200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes it attractive for high-frequency wireless communication systems. The dynamic frequency divider operates from 24 GHz to 103 GHz with 5.2 V voltage supply and consumes 195 mW including the buffer with 41 mW for the divider core, and it can be applied at higher frequencies in low power millimeter wave systems.

引用

页码：357 / +

页数：2

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