Laser processing for thin film crystalline silicon solar cells

被引：1

作者：

Slaoui, Abdelilah ^{[1
]}

Chowdhury, Amartya ^{[1
]}

Prathap, Pathi ^{[1
]}

Said-Bacar, Zabardjade ^{[1
]}

Bahouka, Armel ^{[2
]}

Mermet, Frederic ^{[2
]}

机构：

[1] UDS, CNRS, InESS, UMR 7163, 23 Rue Loess, F-67037 Strasbourg, France

[2] BIREPA LASER, Parc Innovat, F-67400 Strasbourg, France

来源：

LASER MATERIAL PROCESSING FOR SOLAR ENERGY | 2012年 / 8473卷

关键词：

silicon; CW laser; amorphous silicon; polycrystalline silicon; crystallization; epitaxy; annealing; ALUMINUM-INDUCED CRYSTALLIZATION; AMORPHOUS-SILICON; GLASS;

D O I：

10.1117/12.929208

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Laser processing applied to thin film silicon is an interesting approach for solar cell fabrication. In this work, we investigate the effects of a continuous wavelength (CW) laser irradiation in solid phase or liquid phase of silicon on the structural and electrical properties of thin film silicon layers. Thus, results on CW laser induced crystallisation (LIC) of ultrathin amorphous silicon, laser induced epitaxy (LIE) of a thick amorphous silicon on a seed silicon layer, and laser induced thermal annealing (LIA) of polycrystalline silicon films are presented and discussed.

引用

页数：8

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