Ab initio calculations for the polarizabilities of small semiconductor clusters

被引:225
|
作者
Vasiliev, I [1 ]
Ogut, S [1 ]
Chelikowsky, JR [1 ]
机构
[1] UNIV MINNESOTA,MINNESOTA SUPERCOMP INST,MINNEAPOLIS,MN 55455
关键词
D O I
10.1103/PhysRevLett.78.4805
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Polarizabilities of small Si-n, Ge-n (n less than or equal to 10), and GanAsm (n + m less than or equal to 8) clusters are calculated using the higher-order finite-difference pseudopotential method in real space. We find the polarizabilities of the clusters considered to be higher than the value estimated from the ''hard sphere'' model using the bulk static dielectric constant. The computed polarizabilities per atom tend to decrease with increasing the cluster size. This trend resembles the case of metallic clusters, for which the bulk limit is approached from above, and confirms the ''metalliclike'' nature of small semiconductor clusters.
引用
收藏
页码:4805 / 4808
页数:4
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