Phase transition and electronic tuning in gamma-graphynenanoribbons through uniaxial strain and electric field

Gamma-graphyne sheet is a semiconductor with a bandgap of about 0.5 eV. For electronic applications, we need a tunable energy gap. For this purpose, we introduce a tight-binding based method which enables us to study the effects of oriented strains and also electric fields on electronic properties of nanoribbons of monolayer gammagraphyne. Our results shows that the system has a controllable bandgap in the range of 0-2.9 eV in response to a transverse electric field and strain. Applying a transverse electric field and strain causes a semiconductor-metal phase transition. One can control the bandgap and electronic properties of the system with the help of the above parameters. Our findings indicate that the gamma-graphynenanoribbons are promising candidate for applications in high efficiency nanoelectronic devices.