Effect of Ultrasound on the Growth Striation and Electrical Properties of Ga0.03In0.97Sb Single Crystals

被引：4
|
作者：
Kozhemyakin, G. N. [1 ]
Zolkina, L. V. [1 ]
Rom, M. A. [2 ]
机构：
[1] Dal Eastern Ukraine Natl Univ, UA-91034 Lugansk, Ukraine
[2] Natl Acad Sci Ukraine, Inst Single Crystals, UA-61001 Kharkov, Ukraine
来源：
CRYSTALLOGRAPHY REPORTS | 2008年 / 53卷 / 07期
关键词：
81.05.Ea; 81.10.Fq; 61.66.Dk; 61.72.Ss; 61.10.Nz; 72.80.Ey; 43.28.Py;
D O I：
10.1134/S1063774508070249
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The growth striation of impurity segregation and electrical properties of Ga0.03In0.97Sb single crystals grown by the Czochralski method in an ultrasonic field have been investigated. It is established that ultrasonic irradiation of the melt during growth significantly decreases the growth striation (in particular, it eliminates striations spaced at a distance of more than 14 mu m). The Ga0.03In0.97Sb single crystals grown in an ultrasonic field had a higher charge-carrier mobility and thermoelectric power in comparison with the single crystals grown without ultrasound.
引用
收藏
页码：1236 / 1240
页数：5
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