Synthesis of 1T, 2H, and 6R Germanane Polytypes

Polytypism, or the ability for materials to crystallize with different stacking sequences, often leads to fundamentally different properties in families of two-dimensional materials. Here, we show that is possible to control the polytype of GeH, a representative two-dimensional material that is synthesized topotactically by first controlling the polytype sequence of the precursor Zintl phase. 1T, 2H, and 6R GeH can be prepared by the topotactic deintercalation of 1T EuGe2, 2H alpha-CaGe2, and 6R beta-CaGe2, respectively. The 6R and 1T GeH polytypes exhibit remarkably similar properties and feature band gaps of 1.63 and 1.59 eV, respectively. However, the 2H CaGe2 precursor forms due to the incorporation of small amounts of In flux in the germanium lattice, which is retained when converted to GeH. Consequently, 2H GeH has a reduced band gap of 1.45 eV. Finally, temperature dependent diffraction of 6R GeH shows a negative coefficient of thermal expansion along the a-axis and a positive coefficient of thermal expansion along the out-of-plane c-axis.