Ultrafast dynamics of an unoccupied surface resonance state in Bi2Te2Se

被引:5
|
作者
Nurmamat, Munisa [1 ]
Krasovskii, E. E. [2 ,3 ,4 ]
Ishida, Y. [5 ]
Sumida, K. [1 ]
Chen, Jiahua [1 ]
Yoshikawa, T. [1 ]
Chulkov, E. V. [2 ,3 ]
Kokh, K. A. [6 ,8 ]
Tereshchenko, O. E. [7 ,8 ]
Shin, S. [5 ]
Kimura, Akio [1 ]
机构
[1] Hiroshima Univ, Grad Sch Sci, Dept Phys Sci, 1-3-1 Kagamiyama, Higashihiroshima 7398526, Japan
[2] Univ Basque Country, CFM MPC, Dept Fis Mat, Donostia San Sebastian 20080, Basque Country, Spain
[3] DIPC, Donostia San Sebastian 20018, Basque Country, Spain
[4] Basque Fdn Sci, Ikerbasque, Bilbao 48013, Spain
[5] Univ Tokyo, Inst Solid State Phys, 5-1-5 Kashiwa No Ha, Kashiwa, Chiba 2778581, Japan
[6] Russian Acad Sci, Siberian Branch, VS Sobolev Inst Geol & Mineral, Koptyuga Prospekt 3, Novosibirsk 630090, Russia
[7] Russian Acad Sci, Siberian Branch, AV Rzhanov Inst Semicond Phys, Prospekt Akad Lavrentieva 13, Novosibirsk 630090, Russia
[8] Novosibirsk State Univ, Ulica Pirogova 2, Novosibirsk 630090, Russia
基金
俄罗斯科学基金会;
关键词
TOPOLOGICAL INSULATOR; ELECTRON DYNAMICS;
D O I
10.1103/PhysRevB.97.115303
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Electronic structure and electron dynamics in the ternary topological insulator Bi2Te2Se are studied with time- and angle-resolved photoemission spectroscopy using optical pumping. An unoccupied surface resonance split off from the bulk conduction band previously indirectly observed in scanning tunneling measurements is spectroscopically identified. Furthermore, an unoccupied topological surface state (TSS) is found, which is serendipitously located at about 1.5 eV above the occupied TSS, thereby facilitating direct optical transitions between the two surface states at h omega = 1.5 eVin an n-type topological insulator. An appreciable nonequilibrium population of the bottom of the bulk conduction band is observed for longer than 15 ps after the pump pulse. This leads to a long recovery time of the lower TSS, which is constantly populated by the electrons coming from the bulk conduction band. Our results demonstrate Bi2Te2Se to be an ideal platform for designing future optoelectronic devices based on topological insulators.
引用
收藏
页数:6
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