Fabrication of a lateral field emission diode using SIMOX SOI

We have fabricated lateral field emission devices using SIMOX SOI. Because the vertical isolation is achieved by buried oxide layer, the only needed process for separation between anode and cathode is lateral isolation. The gap between anode and cathode can be generated by LOCOS-like sacrificial oxidation process or by cleavage due to thermal stress during heating and cooling cycle. The gap size can be controlled precisely and reliably from tens to hundreds nano-meter scale. We have identified that the control parameters were the annealing temperature, annealing time, crystal direction and buried oxide etching conditions in the formation process. The diodes using single crystalline lateral field emitters have been successfully fabricated and operated. The diode isolated by the thermal stress method shows a lower operating voltage than that of sacrificial oxidation method, even though it exhibits a slightly higher turn-on voltage.