Compact model for RF CMOS differential transformers up to 30 GHz

被引：0

作者：

Jiao, C ^{[1
]}

Gao, W ^{[1
]}

Yu, ZP ^{[1
]}

机构：

[1] Tsinghua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

2005 6TH INTERNATIONAL CONFERENCE ON ASIC PROCEEDINGS, BOOKS 1 AND 2 | 2005年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A compact model is presented for on-chip differential transformers fabricated in RF CMOS technology on lossy substrates. The model is scalable, derived from the designed physical layout and processing technology. It suf ces for transformers' simulation and synthesis. A new method for calculation of self and mutual inductances of differential transformers is provided. EM-simulation is used to verify the new compact model and results show excellent agreement with the proposed model over a large frequency range (up to 30GHz).

引用

页码：938 / 941

页数：4

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