Growth and Characterization of α-, β-, and ε-Ga2O3 Epitaxial Layers on Sapphire

被引：24

作者：

Yao, Y. ^{[1
]}

Lyle, L. A. M. ^{[1
]}

Rokholt, J. A. ^{[1
]}

Okur, S. ^{[2
]}

Tompa, G. S. ^{[2
]}

Salagaj, T. ^{[2
]}

Sbrockey, N. ^{[2
]}

Davis, R. F. ^{[1
]}

Porter, L. M. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Struct Mat Ind Inc, Piscataway, NJ 08854 USA

来源：

GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 7 | 2017年 / 80卷 / 07期

基金：

美国国家科学基金会;

关键词：

BETA-GA2O3; SINGLE-CRYSTALS; MOLECULAR-BEAM EPITAXY; FILMS; HETEROEPITAXY;

D O I：

10.1149/08007.0191ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This study reports on the growth and characterization of three different phases - alpha, beta, and epsilon - of Ga2O3 epitaxial layers grown on (001) sapphire substrates at 650 degrees C. The stable beta-phase was observed for films grown using metalorganic chemical vapor deposition with trimethygallium and oxygen as source gases. In contrast, the alpha- and/or epsilon-phase(s) were observed for films grown by halide vapor phase epitaxy with gallium chloride and oxygen as source gases. Orientation relationships from x-ray diffraction measurements are reported, along with transmission electron microscopy images of the interfacial microstructure and optical transmittance measurements of the different phases.

引用

页码：191 / 196

页数：6

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