Impact of the n+-GaN/AlGaN/p+-GaN Tunnel Junction for III-nitride UV Light-emitting Diodes

被引：0
|
作者：
Li, Luping
Zhang, Yonghui
Zhang, Zi-Hui [1 ]
机构：
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Inst Micronano Photoelect & Electromagnet Technol, 5340 Xiping Rd, Tianjin 300401, Peoples R China
来源：
2017 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP) | 2017年
基金：
中国国家自然科学基金;
关键词：
EFFICIENCY;
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
This work conducts comprehensive analysis and presents in-depth understanding regarding the n(+)-GaN/AlGaN/p(+)-GaN tunnel junction so that the hole injection, the current spreading effect and the internal quantum efficiency can be improved for III-nitride UV LEDs.
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页数：5
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