Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film

被引：23

作者：

Pu, Nen-Wen ^{[1
]}

Liu, Wei-Sheng ^{[1
]}

Cheng, Huai-Ming ^{[1
]}

Hu, Hung-Chun ^{[1
]}

Hsieh, Wei-Ting ^{[1
]}

Yu, Hau-Wei ^{[1
]}

Liang, Shih-Chang ^{[2
]}

机构：

[1] Yuan Ze Univ, Dept Photon Engn, Chungli 32003, Taiwan

[2] Chung Shan Inst Sci & Technol, Mat & Electopt Res Div, Lungtan 32599, Taiwan

来源：

MATERIALS | 2015年 / 8卷 / 09期

关键词：

oxide-related compound; indium tin oxide (ITO); magnetron sputtering; transparent conducting oxide (TCO); TRANSPARENT CONDUCTIVE FILMS; ELECTRICAL-PROPERTIES; OPTICAL-PROPERTIES; ITO FILMS; TRANSMITTANCE; FABRICATION; PANEL; GLASS;

D O I：

10.3390/ma8095316

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 degrees C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 x 10(-4) /cm), carrier concentration (4.1 x 10(21) cm(-3)), carrier mobility (10 cm(2)/Vs), and mean visible-light transmittance (90%) at wavelengths of 400-800 nm at a deposition temperature of 400 degrees C. The superior carrier concentration of the Ti-doped ITO alloys (>10(21) cm(-3)) with a high figure of merit (81.1 x 10(-3) (-1)) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.

引用

页码：6471 / 6481

页数：11

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