Simulation of GaN/InGaN avalanche phototransistors

被引：1
|
作者：
Zhou, Zhongliang [1 ]
Zhu, Min [1 ]
Wu, Qi [1 ]
Di, Shaohui [1 ]
Wang, Tong [1 ]
Chen, Jun [1 ]
机构：
[1] Soochow Univ, Sch Elect & Informat Engn, Suzhou 215006, Jiangsu, Peoples R China
来源：
8TH INTERNATIONAL SYMPOSIUM ON ADVANCED OPTICAL MANUFACTURING AND TESTING TECHNOLOGIES: OPTOELECTRONIC MATERIALS AND DEVICES | 2016年 / 9686卷
关键词：
Simulation; GaN/InGaN; APT; Avalanche breakdown voltage; HETEROJUNCTION PHOTOTRANSISTORS; DIFFUSION MODEL; PHOTODIODES; GAIN;
D O I：
10.1117/12.2242566
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Physical simulation of a two-terminal typical avalanche phototransistor with a floating base (2T-APT) based on GaN/InGaN is reported. The simulated current characteristic is also compared with the experiment result. Under high voltages, the carriers multiply in the reverse-biased base-to-collector (BC) junction. To reduce the avalanche breakdown voltage, the doping concentration and the thickness of the base are discussed in detail. It is found that the lower voltage could be achieved by decreasing the doping concentration and the thickness of base. Those results could be explained theoretically by the electric field and the potential barrier in the emitter-to-base (EB) junction and the BC junction.
引用
收藏
页数：6
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