Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Shubnikov-de Haas oscillations

被引：7

作者：

Hang, DR

Shih, DK

Huang, CF

Hung, WK

Chang, YH

Chen, YF ^{[1
]}

Lin, HH

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 106, Taiwan

[2] Natl Sun Yat Sen Univ, Dept Mat Sci & Opt Engn, Kaohsiung 804, Taiwan

[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

[4] Ind Technol Res Inst, Ctr Measurement Standards, Natl Measurement Lab, Hsinchu 300, Taiwan

[5] Natl Taiwan Univ, Dept Electroopt Engn, Taipei, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2004年 / 22卷 / 1-3期

关键词：

two-dimensional electron system; Shubnikov-de Haas; nitride; InAsN;

D O I：

10.1016/j.physe.2003.12.008

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Transport properties of two-dimensional electron gases formed in low-nitrogen-content InAs1-xNx/InGaAs single quantum wells have been investigated using Shubnikov-de Haas (SdH) oscillations. We determine the nitrogen-content-dependent two-dimensional carrier concentration and electron effective mass by analyzing the SdH oscillation function. The carrier mobility decreases with the increase of nitrogen composition, suggesting some deterioration of crystal quality. Our result shows that even in the dilute alloy limit, the electron effective mass increases considerably, and such an enhancement cannot be explained by the present simple band anticrossing model. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：308 / 311

页数：4

共 46 条

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