Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition

被引：5

作者：

Ohshima, T ^{[1
]}

Moriguchi, H ^{[1
]}

Shigemasa, R ^{[1
]}

Goto, S ^{[1
]}

Tsunotani, M ^{[1
]}

Kimura, T ^{[1
]}

机构：

[1] Oki Elect Ind Co Ltd, Semicond Technol Lab, Hachioji, Tokyo 1938550, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1999年 / 38卷 / 2B期

关键词：

InAlAs; Schottky characteristics; MOCVD; reverse current; deep trap;

D O I：

10.1143/JJAP.38.1161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Schottky characteristics of InAlAs grown by metal-organic chemical vapor deposition (MOCVD) have been evaluated. InAlAs Schottky characteristics are strongly affected by MOCVD growth temperature. The reverse current of InAlAs frown at 700 degrees C is more than one order of magnitude larger than that at 750 degrees C. From deep-level transient spectroscopy (DLTS) measurements, electron traps with activation energies of 0.45, 0.33 and 0.15 eV have been observed in InAlAs grown at 700 degrees C. The results of C-V, Hall and secondary ion mass spectrometry (SIMS) measurements suggest that the trap is acceptor-type and seems to be related not to impurities but to intrinsic defects. The mechanism of the large reverse current in InAlAs frown at 700 degrees C is believed to be due to the conduction through the trap.

引用

页码：1161 / 1163

页数：3

共 50 条

[11] Characteristics of a-plane GaN with the SiNx insertion layer grown by metal-organic chemical vapor deposition
Ko, T. S.
Wang, T. C.
Huang, H. M.
Chen, J. R.
Chen, H. G.
Chu, C. P.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
JOURNAL OF CRYSTAL GROWTH, 2008, 310 (23) : 4972 - 4975
[12] Effects of temperature on ZnO hybrids grown by metal-organic chemical vapor deposition
Kim, A-Young
Fang, Samseok
Lee, Do Han
Yim, So Young
Byun, Dongjin
MATERIALS RESEARCH BULLETIN, 2012, 47 (10) : 2888 - 2890
[13] Heteroepitaxial evolution of AlN on GaN Grown by metal-organic chemical vapor deposition
Gherasimova, M
Cui, G
Ren, Z
Su, J
Wang, XL
Han, J
Higashimine, K
Otsuka, N
JOURNAL OF APPLIED PHYSICS, 2004, 95 (05) : 2921 - 2923
[14] Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
Manz, Christian
Leone, Stefano
Kirste, Lutz
Ligl, Jana
Frei, Kathrin
Fuchs, Theodor
Prescher, Mario
Waltereit, Patrick
Verheijen, Marcel A.
Graff, Andreas
Simon-Najasek, Michel
Altmann, Frank
Fiederle, Michael
Ambacher, Oliver
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (03)
[15] Optical properties of GaMnN films grown by metal-organic chemical vapor deposition
Xing Hai-Ying
Fan Guang-Han
Yang Xue-Lin
Zhang Guo-Yi
ACTA PHYSICA SINICA, 2010, 59 (01) : 504 - 507
[16] Structural and optical investigation of GaN grown by metal-organic chemical vapor deposition
Gao, XY
Wang, SY
Li, J
Zheng, YX
Zhang, RJ
Zhou, P
Yang, YM
Chen, LY
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 44 (03) : 765 - 768
[17] Nucleation layer evolution in metal-organic chemical vapor deposition grown GaN
Wu, XH
Kapolnek, D
Tarsa, EJ
Heying, B
Keller, S
Keller, BP
Mishra, UK
DenBaars, SP
Speck, JS
APPLIED PHYSICS LETTERS, 1996, 68 (10) : 1371 - 1373
[18] Influence of annealing on ZnO films grown by metal-organic chemical vapor deposition
Li, HX
Liu, H
Wang, JY
Yao, SS
Cheng, XF
Boughton, RI
MATERIALS LETTERS, 2004, 58 (27-28) : 3630 - 3633
[19] ZnO thin film grown on glass by metal-organic chemical vapor deposition
Ma, X. M.
Yang, X. T.
Wang, C.
Yang, J.
Gao, X. H.
Liu, J. E.
Jing, H.
Du, G. T.
Liu, B. Y.
Ma, K.
2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3, 2008, : 833 - 835
[20] Thermal annealing of InN films grown by metal-organic chemical vapor deposition
Bi, ZX
Zhang, R
Xie, ZL
Xiu, XQ
Ye, YD
Liu, B
Gu, SL
Shen, B
Shi, Y
Zheng, YD
THIN SOLID FILMS, 2005, 488 (1-2) : 111 - 115

← 1 2 3 4 5 →