Semiconductor to metal transition in two-dimensional gold and its van der Waals heterostack with graphene

被引:73
|
作者
Forti, Stiven [1 ,2 ]
Link, Stefan [2 ]
Stoehr, Alexander [2 ]
Niu, Yuran [3 ]
Zakharov, Alexei A. [3 ]
Coletti, Camilla [1 ,4 ]
Starke, Ulrich [2 ]
机构
[1] Ist Italiano Tecnol, Ctr Nanotechnol Innovat NEST, Piazza San Silvestro 12, I-56127 Pisa, Italy
[2] Max Planck Inst Festkorperforsch, Feisenbergstr 1, D-70569 Stuttgart, Germany
[3] Lund Univ, MAX Lab 4, POB 118, S-22100 Lund, Sweden
[4] Ist Italiano Tecnol, Graphene Labs, Via Morego 30, I-16163 Genoa, Italy
基金
欧盟地平线“2020”;
关键词
ELECTRONIC-STRUCTURE; GRAPHITE; SURFACE; GROWTH;
D O I
10.1038/s41467-020-15683-1
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The synthesis of two-dimensional (2D) transition metals has attracted growing attention for both fundamental and application-oriented investigations, such as 2D magnetism, nanoplasmonics and non-linear optics. However, the large-area synthesis of this class of materials in a single-layer form poses non-trivial difficulties. Here we present the synthesis of a large-area 2D gold layer, stabilized in between silicon carbide and monolayer graphene. We show that the 2D-Au ML is a semiconductor with the valence band maximum 50 meV below the Fermi level. The graphene and gold layers are largely non-interacting, thereby defining a class of van der Waals heterostructure. The 2D-Au bands, exhibit a 225 meV spin-orbit splitting along the (Gamma K) over bar direction, making it appealing for spin-related applications. By tuning the amount of gold at the SiC/graphene interface, we induce a semiconductor to metal transition in the 2D-Au, which has not yet been observed and hosts great interest for fundamental physics.
引用
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页数:7
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