Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

被引：3
|
作者：
Sitnitsky, Ilona [1 ]
Garramone, John J. [1 ]
Abel, Joseph [1 ]
Xu, Peng [2 ]
Barber, Steven D. [2 ]
Ackerman, Matt L. [2 ]
Schoelz, J. Kevin [2 ]
Thibado, Paul M. [2 ]
LaBella, Vincent P. [1 ]
机构：
[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA
[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 04期
基金：
美国国家科学基金会;
关键词：
ELECTRON-EMISSION MICROSCOPY; INTERFACES; SPECTROSCOPY; SCATTERING; TRANSPORT; SCALE;
D O I：
10.1116/1.4734307
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ballistic electron emission microscopy (BEEM) was performed to obtain current versus bias characteristics of nonepitaxial nanometer-thick Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data were averaged from thousands of spectra for various Au film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. The authors report an increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence for the conservation of the parallel momentum of charge carriers at the metal-semiconductor interface. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4734307]
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页数：4
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