Schottky barrier and attenuation length for hot hole injection in nonepitaxial Au on p-type GaAs

被引：3

作者：

Sitnitsky, Ilona ^{[1
]}

Garramone, John J. ^{[1
]}

Abel, Joseph ^{[1
]}

Xu, Peng ^{[2
]}

Barber, Steven D. ^{[2
]}

Ackerman, Matt L. ^{[2
]}

Schoelz, J. Kevin ^{[2
]}

Thibado, Paul M. ^{[2
]}

LaBella, Vincent P. ^{[1
]}

机构：

[1] SUNY Albany, Coll Nanoscale Sci & Engn, Albany, NY 12203 USA

[2] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2012年 / 30卷 / 04期

基金：

美国国家科学基金会;

关键词：

ELECTRON-EMISSION MICROSCOPY; INTERFACES; SPECTROSCOPY; SCATTERING; TRANSPORT; SCALE;

D O I：

10.1116/1.4734307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ballistic electron emission microscopy (BEEM) was performed to obtain current versus bias characteristics of nonepitaxial nanometer-thick Au on p-type GaAs in order to accurately measure the local Schottky barrier height. Hole injection BEEM data were averaged from thousands of spectra for various Au film thicknesses and then used to determine the attenuation length of the energetic charge carriers as a function of tip bias. The authors report an increase in attenuation length at biases near the Schottky barrier, providing evidence for the existence of coherent BEEM currents in Schottky diodes. These results provide additional evidence for the conservation of the parallel momentum of charge carriers at the metal-semiconductor interface. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4734307]

引用

页数：4

共 50 条

[1] HOT HOLE EFFECTS IN SINGLE BARRIER P-TYPE GAAS/(ALGA)AS/GAAS TUNNEL STRUCTURES
ALIKACEM, M
MAUDE, DK
EAVES, L
HENINI, M
HILL, G
PATE, MA
APPLIED PHYSICS LETTERS, 1991, 59 (24) : 3124 - 3126
[2] The determination of series resistance and interface state density distributions of Au/p-type GaAs Schottky barrier diodes
Asimov, A.
Ahmetoglu , M.
Kucur, B.
Ozer, M.
Guzel, T.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2013, 7 (7-8): : 490 - 493
[3] The determination of series resistance and interface state density distributions of Au/p-type GaAs schottky barrier diodes
Ahmetoglu Afrailov, M. (afrailov@uludag.edu.tr), 1600, National Institute of Optoelectronics (07): : 7 - 8
[4] SPUTTERED SCHOTTKY-BARRIER SOLAR-CELLS ON P-TYPE GAAS
EDWEEB, ME
CHARLSON, EJ
CHARLSON, EM
APPLIED PHYSICS LETTERS, 1983, 43 (06) : 572 - 574
[5] METAL CONTACTS TO P-TYPE GAAS WITH LARGE SCHOTTKY-BARRIER HEIGHTS
WALDROP, JR
APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1518 - 1520
[6] Quantum Mechanical Simulation of Hole Transport in p-Type Si Schottky Barrier MOSFETs
Choi, Wonchul
Shin, Mincheol
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2011, 11 (07) : 5861 - 5864
[7] Au/Ni/Au as a contact for p-type GaAs
Jones, S. O.
Bancroft, E.
Jarvis, S. P.
Hayne, M.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (12)
[8] ELECTRICAL CHARACTERIZATION OF SCHOTTKY CONTACTS OF AU,AL,GD, AND PT ON N-TYPE AND P-TYPE GAAS
OKUMURA, T
TU, KN
JOURNAL OF APPLIED PHYSICS, 1987, 61 (08) : 2955 - 2961
[9] DLTS CHARACTERIZATION OF PROTON IMPLANTATION DEFECTS IN P-TYPE GAAS BY USING SCHOTTKY-BARRIER DIODES
NEL, M
AURET, FD
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1987, 103 (1-4): : 197 - 202
[10] Schottky barrier heights of contact metals to p-type ZnSe
Yasuo Koide
T. Kawakami
Masanori Murakami
N. Teraguchi
Y. Tomomura
A. Suzuki
Journal of Electronic Materials, 1998, 27 : 772 - 775

← 1 2 3 4 5 →