Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

被引：25

作者：

Woicik, JC ^{[1
]}

Gupta, JA

Watkins, SP

Crozier, ED

机构：

[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期

关键词：

D O I：

10.1063/1.122371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying. (C) 1998 American Institute of Physics. [S0003-6951(98)03235-5].

引用

页码：1269 / 1271

页数：3