Bond-length strain in buried Ga1-xInxAs thin-alloy films grown coherently on InP(001)

被引：25
|
作者：
Woicik, JC [1 ]
Gupta, JA
Watkins, SP
Crozier, ED
机构：
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 09期
关键词：
D O I：
10.1063/1.122371
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The bond lengths in a series of strained, buried Ga1-xInxAs thin-alloy films grown coherently on InP(001) have been determined by high-resolution extended x-ray absorption fine-structure measurements. Comparison with a random-cluster calculation demonstrates that the external in-plane epitaxial strain imposed by pseudomorphic growth opposes the natural bond-length distortions due to alloying. (C) 1998 American Institute of Physics. [S0003-6951(98)03235-5].
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收藏
页码：1269 / 1271
页数：3
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