LOW POWER SIZE-EFFICIENT CMOS UWB LOW-NOISE AMPLIFIER DESIGN

被引：0

作者：

Jhon, Hee-Sauk ^{[1
]}

Song, Ickhyun ^{[1
]}

Jeon, Jongwook ^{[1
]}

Koo, MinSuk ^{[1
]}

Park, Byung-Gook ^{[1
]}

Lee, Jong Duk ^{[1
]}

Shin, Hyungcheol ^{[1
]}

机构：

[1] Seoul Natl Univ, Sch Elect Engn & Comp Sci, Seoul, South Korea

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2009年 / 51卷 / 02期

关键词：

ultra-wide bond (UWB); low noise amplifier (LNA); mixed-signal; CMOS; LNA; GHZ;

D O I：

10.1002/mop.24104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The design and measurement results of 3-5 GHz fully integrated ultra-wideband (UWB) CMOS LNA are presented. To boost the transconductance of the LNA and to reduce circuit area effectively, we eliminate a source degeneration inductor using resistive-feedback cascode structure. The implemented UWB LNA shows peak gain of 10.8 dB, more than 10 dB of input return loss, and a noise figure of 3.3-4.2 dB from 3 to 5.1 GHz with power dissipation of 14 in W Die input PldB and input IP3 (IIP3) at 4 GHz, are about -6 dBm and +4 dBm, respectively . For low cost, the LNA has been fabricated using a 0.18-mu m thin metal CMOS process with top metal thickness of 0.84 mu m. (C) 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 494-496, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24104

引用

页码：494 / 496

页数：3

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