Investigation of the sulfur doping profile in femtosecond-laser processed silicon

被引：36

作者：

Guenther, Kay-Michael ^{[1
]}

Gimpel, Thomas ^{[2
]}

Kontermann, Stefan ^{[2
]}

Schade, Wolfgang ^{[2
]}

机构：

[1] Tech Univ Clausthal, EFZN, D-38640 Goslar, Germany

[2] Fraunhofer Heinrich Hertz Inst, D-38640 Goslar, Germany

来源：

APPLIED PHYSICS LETTERS | 2013年 / 102卷 / 20期

关键词：

INFRARED-ABSORPTION; CENTERS;

D O I：

10.1063/1.4807679

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we demonstrate that silicon can be doped with electrically active sulfur donors beyond the solubility limit of 3 x 10(16) cm(-3). We investigate the sulfur doping profile at the surface of femtosecond-laser processed silicon with secondary ion mass spectroscopy (SIMS) and capacitance-voltage measurements. SIMS confirms previous observations that the fs-laser process can lead to a sulfur hyperdoping of 5 x 10(19) cm(-3) at the surface. Nevertheless, the electrical measurements show that less than 1% of the sulfur is electrically active as a donor. (C) 2013 AIP Publishing LLC.

引用

页数：4

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