共 50 条
- [41] Very weak dependence on temperature of 980-nm InGaAs/InGaAsP/InGaP lasers Japanese Journal of Applied Physics, Part 2: Letters, 1994, 33 (9 B):
- [42] High performance 980 nm single mode semiconductor lasers Binggong Xuebao/Acta Armamentarii, 2010, 31 (08): : 1110 - 1113
- [43] VERY WEAK DEPENDENCE ON TEMPERATURE OF 980-NM INGAAS/INGAASP/INGAP LASERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (9B): : L1307 - L1309
- [45] SILICON RECRYSTALLIZATION EFFECTS IN MIRROR COATINGS OF HIGH-POWER 980-NM INGAAS/ALGAAS LASERS COMPOUND SEMICONDUCTORS 1994, 1995, (141): : 537 - 542
- [49] Comparing 1470- and 980-nm diode lasers for endovenous ablation treatments Lasers in Medical Science, 2015, 30 : 1583 - 1587
- [50] Power, reliability, and stability improvements extend utility of 980-nm pump lasers LASER FOCUS WORLD, 2000, : 35 - +