Possible generation of transient THz electronic drift effects in a semiconductor by a high electric field

被引：0
|
作者：
Filip, VM
Plavitu, CN
机构：
来源：
JOURNAL DE PHYSIQUE I | 1996年 / 6卷 / 03期
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D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Using the Boltzmann equation formalism for a simple semiconductor model, the transient drift velocity of the electrons is computed when a high uniform electric field is suddenly turned on. Rapid oscillations superimposed on an overshoot behaviour are obtained. It is showed that this behaviour results from the combined action of the field and of the electron-phonon interaction.
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页码：403 / 412
页数：10
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